| Growth and temperature-depending raman characterization of different nitrogen-doped 4H-SiC crystals | |
| Yang, X.L.; Chen, X.F.; Peng, Y.; Xie, X.J.; Hu, X.B.; Xu, X.G.; Yu, P.; Wang, R.P. | |
| 2017 | |
| 会议名称 | 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 |
| 会议日期 | 25 September 2016 through 29 September 2016 |
| 关键词 | Electrical properties N-doped SiC Phonon lifetime Raman spectra |
| 卷号 | 897 MSF |
| DOI | 10.4028/www.scientific.net/MSF.897.307 |
| 页码 | 307-310 |
| 收录类别 | EI ; SCOPUS |
| 会议录 | Materials Science Forum
 |
| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6029448 |
| 专题 | 山东大学 |
| 作者单位 | 1.State Key Laboratory of Crystal Materials, Shandong University, Jinan 2.250100, Chin |
| 推荐引用方式 GB/T 7714 | Yang, X.L.,Chen, X.F.,Peng, Y.,et al. Growth and temperature-depending raman characterization of different nitrogen-doped 4H-SiC crystals[C]. 见:11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. 25 September 2016 through 29 September 2016. |
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