Deposition and etching of SiF2 on Si surface: MD study | |
Chen, X.; Lu, X.; He, P.; Zhao, C.; Sun, W.; Zhang, P.; Gou, F. | |
2012 | |
会议日期 | AUG 23-27, 2010 |
会议地点 | Beijing, PEOPLES R CHINA |
会议录 | 18th International Vacuum Congress (IVC) |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5977312 |
专题 | 贵州大学 |
作者单位 | 1.[1]Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China 2.[2]Guizhou Univ, Inst Plasma Surface Interact, Guiyang, Peoples R China 3.[3]Guizhou Univ, Coll sci, Guiyang, Peoples R China 4.[4]FOM Inst Plasma Phys, Nieuwegein, Netherlands |
推荐引用方式 GB/T 7714 | Chen, X.,Lu, X.,He, P.,et al. Deposition and etching of SiF2 on Si surface: MD study[C]. 见:. Beijing, PEOPLES R CHINA. AUG 23-27, 2010. |
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