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	Heat treatment temperature effects on the formation of Mg2Si films deposited by electron beam evaporation
	Xiao, Qingquan; Fang, Di; Liu, Xiaojun; Liao, Yangfang; Zhao, Kejie; Xie, Quan
	2017
卷号	28期号:1页码:702-706
URL标识	查看原文
WOS记录号	WOS:000392308700091
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5971996
专题	贵州大学
作者单位	1.[1]Guizhou Univ, Inst Adv Optoelect Mat & Technol, Coll Big Data & Informat Engn, Guiyang 550025, Peoples R China 2.[2]Univ Greenwich, Computat Mech & Reliabil Grp, London SE10 9LS, England 3.[3]Chinese Acad Sci, Sci Tech Cooperat Off, Beijing Branch, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Xiao, Qingquan,Fang, Di,Liu, Xiaojun,et al. Heat treatment temperature effects on the formation of Mg2Si films deposited by electron beam evaporation[J],2017,28(1):702-706.
APA	Xiao, Qingquan,Fang, Di,Liu, Xiaojun,Liao, Yangfang,Zhao, Kejie,&Xie, Quan.(2017).Heat treatment temperature effects on the formation of Mg2Si films deposited by electron beam evaporation.,28(1),702-706.
MLA	Xiao, Qingquan,et al."Heat treatment temperature effects on the formation of Mg2Si films deposited by electron beam evaporation".28.1(2017):702-706.

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