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	Low Gate Voltage Operated Multi-emitter-dot H+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor
	Yuan Heng; Zhang Ji-Xing; Zhang Chen; Zhang Ning; Xu Li-Xia; Ding Ming; Clarke, Patrick J.
刊名	CHINESE PHYSICS LETTERS
	2015
卷号	32
ISSN号	0256-307X
DOI	10.1088/0256-307X/32/2/020701
URL标识	查看原文
收录类别	SCIE ; ISTICCSCD
WOS记录号	WOS:000349419000007
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5961029
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Yuan Heng,Zhang Ji-Xing,Zhang Chen,et al. Low Gate Voltage Operated Multi-emitter-dot H+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor[J]. CHINESE PHYSICS LETTERS,2015,32.
APA	Yuan Heng.,Zhang Ji-Xing.,Zhang Chen.,Zhang Ning.,Xu Li-Xia.,...&Clarke, Patrick J..(2015).Low Gate Voltage Operated Multi-emitter-dot H+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor.CHINESE PHYSICS LETTERS,32.
MLA	Yuan Heng,et al."Low Gate Voltage Operated Multi-emitter-dot H+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor".CHINESE PHYSICS LETTERS 32(2015).

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