A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC

	A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC
	Gong, Z ; Chen, B ; Hu, XQ ; Shi, Y ; Dai, FF
刊名	chinese journal of electronics
	2012
卷号	21 期号:2 页码:231-235
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2013-03-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23726]
专题	半导体研究所_高速电路与神经网络实验室
推荐引用方式 GB/T 7714	Gong, Z,Chen, B,Hu, XQ,et al. A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC[J]. chinese journal of electronics,2012,21(2):231-235.
APA	Gong, Z,Chen, B,Hu, XQ,Shi, Y,&Dai, FF.(2012).A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC.chinese journal of electronics,21(2),231-235.
MLA	Gong, Z,et al."A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC".chinese journal of electronics 21.2(2012):231-235.