Thermal characterization of GaN-based laser diodes by forward-voltage method

	Thermal characterization of GaN-based laser diodes by forward-voltage method
	Feng, MX ; Zhang, SM ; Jiang, DS ; Liu, JP ; Wang, H ; Zeng, C ; Li, ZC ; Wang, HB ; Wang, F ; Yang, H
刊名	journal of applied physics
	2012
卷号	111 期号:9 页码:94513
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23633]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Feng, MX,Zhang, SM,Jiang, DS,et al. Thermal characterization of GaN-based laser diodes by forward-voltage method[J]. journal of applied physics,2012,111(9):94513.
APA	Feng, MX.,Zhang, SM.,Jiang, DS.,Liu, JP.,Wang, H.,...&Yang, H.(2012).Thermal characterization of GaN-based laser diodes by forward-voltage method.journal of applied physics,111(9),94513.
MLA	Feng, MX,et al."Thermal characterization of GaN-based laser diodes by forward-voltage method".journal of applied physics 111.9(2012):94513.