Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy

	Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy
	He, W ; Lu, SL ; Dong, JR ; Zhao, YM ; Yang, H
刊名	japanese journal of applied physics
	2012
卷号	51 期号:1，part 1 页码:15501
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2013-03-20
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23746]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	He, W,Lu, SL,Dong, JR,et al. Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy[J]. japanese journal of applied physics,2012,51(1，part 1):15501.
APA	He, W,Lu, SL,Dong, JR,Zhao, YM,&Yang, H.(2012).Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy.japanese journal of applied physics,51(1，part 1),15501.
MLA	He, W,et al."Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy".japanese journal of applied physics 51.1，part 1(2012):15501.