| Complementary Skyrmion Racetrack Memory Enables Voltage-Controlled Local Data Update Functionality | |
| Chen, Xing; Kang, Wang; Zhu, Daoqian; Zhang, Xichao; Lei, Na; Zhang, Youguang; Zhou, Yan; Zhao, Weisheng | |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 2018 | |
| 卷号 | 65页码:4667-4673 |
| 关键词 | Data update magnetic Skyrmion (Sk) racetrack memory (RM) voltage control |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/TED.2018.2866912 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| WOS记录号 | WOS:000445239700088 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5930017 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Chen, Xing,Kang, Wang,Zhu, Daoqian,et al. Complementary Skyrmion Racetrack Memory Enables Voltage-Controlled Local Data Update Functionality[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65:4667-4673. |
| APA | Chen, Xing.,Kang, Wang.,Zhu, Daoqian.,Zhang, Xichao.,Lei, Na.,...&Zhao, Weisheng.(2018).Complementary Skyrmion Racetrack Memory Enables Voltage-Controlled Local Data Update Functionality.IEEE TRANSACTIONS ON ELECTRON DEVICES,65,4667-4673. |
| MLA | Chen, Xing,et al."Complementary Skyrmion Racetrack Memory Enables Voltage-Controlled Local Data Update Functionality".IEEE TRANSACTIONS ON ELECTRON DEVICES 65(2018):4667-4673. |
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