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	First-principle calculations of electronic and optical properties of Ti-doped β-Ga2O3 with intrinsic defects
	Zhang Z.; Ding Z.; Guo X.; Luo Z.; Wei J.; Yang C.; Huang Y.; Li Z.
	2019
卷号	6期号:10
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5838026
专题	贵州理工学院
作者单位	1.[1]College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, China 2.[2]School of Information, Guizhou University of Finance and Economics, Guiyang, 550025, China 3.[3]School of Electrical and Information Engineering, Guizhou Institute of Technology, Guiyang, 550025, China 4.[4]Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guizhou University, Guiyang, 550025, China 5.[5]Power Semiconductor Device Reliability Engineering Center of the Ministry of Education, Guizhou University, Guiyang, 550025, China
推荐引用方式 GB/T 7714	Zhang Z.,Ding Z.,Guo X.,et al. First-principle calculations of electronic and optical properties of Ti-doped β-Ga2O3 with intrinsic defects[J],2019,6(10).
APA	Zhang Z..,Ding Z..,Guo X..,Luo Z..,Wei J..,...&Li Z..(2019).First-principle calculations of electronic and optical properties of Ti-doped β-Ga2O3 with intrinsic defects.,6(10).
MLA	Zhang Z.,et al."First-principle calculations of electronic and optical properties of Ti-doped β-Ga2O3 with intrinsic defects".6.10(2019).

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