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	Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates
	Ai, Yujie[1]; Xue, Chengshan[1]; Sun, Chuanwei[2]; Sun, Lili[1]; Zhuang, Huizhao[1]; Wang, Fuxue[1]; Yang, Zhaozhu[1]; Qin, Lixia[1]
	2007
卷号	61期号:19-20页码:4103-4106
URL标识	查看原文
WOS记录号	WOS:000248155900025
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5795695
专题	山东师范大学
作者单位	1.[1]Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China 2.[2]Jinan Univ, Sch Informat Sci & Engn, Jinan 250022, Peoples R China
推荐引用方式 GB/T 7714	Ai, Yujie[1],Xue, Chengshan[1],Sun, Chuanwei[2],et al. Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates[J],2007,61(19-20):4103-4106.
APA	Ai, Yujie[1].,Xue, Chengshan[1].,Sun, Chuanwei[2].,Sun, Lili[1].,Zhuang, Huizhao[1].,...&Qin, Lixia[1].(2007).Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates.,61(19-20),4103-4106.
MLA	Ai, Yujie[1],et al."Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates".61.19-20(2007):4103-4106.

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