The effect of incident laser energy on pulsed laser deposition of HgCdTe films | |
Liu, Mei[1]; Man, Baoyuan[1]; Lin, Xingchao[2]; Li, Xiangyang[2] | |
2009 | |
卷号 | 311期号:4页码:1087-1090 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000264711800013 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5790379 |
专题 | 山东师范大学 |
作者单位 | 1.[1]Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China 2.[2]Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Mei[1],Man, Baoyuan[1],Lin, Xingchao[2],et al. The effect of incident laser energy on pulsed laser deposition of HgCdTe films[J],2009,311(4):1087-1090. |
APA | Liu, Mei[1],Man, Baoyuan[1],Lin, Xingchao[2],&Li, Xiangyang[2].(2009).The effect of incident laser energy on pulsed laser deposition of HgCdTe films.,311(4),1087-1090. |
MLA | Liu, Mei[1],et al."The effect of incident laser energy on pulsed laser deposition of HgCdTe films".311.4(2009):1087-1090. |
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