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Growth and characterization of the InN film ammonification technique
Wang, Fuxue[1]; Xue, Chengshan[1]; Zhuang, Huizhao[1]; Zhang, Xiaokai[1]; Ai, Yujie[1]; Sun, Lih[1]; Yang, Zhaozhu[1]; Li, Hong[1]
2008
卷号40期号:3页码:664-667
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WOS记录号WOS:000253032800041
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5783938
专题山东师范大学
作者单位[1]Shandong Normal Univ, Inst Semicond, Funct Mat Lab, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Wang, Fuxue[1],Xue, Chengshan[1],Zhuang, Huizhao[1],et al. Growth and characterization of the InN film ammonification technique[J],2008,40(3):664-667.
APA Wang, Fuxue[1].,Xue, Chengshan[1].,Zhuang, Huizhao[1].,Zhang, Xiaokai[1].,Ai, Yujie[1].,...&Li, Hong[1].(2008).Growth and characterization of the InN film ammonification technique.,40(3),664-667.
MLA Wang, Fuxue[1],et al."Growth and characterization of the InN film ammonification technique".40.3(2008):664-667.
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