Growth and characterization of the InN film ammonification technique | |
Wang, Fuxue[1]; Xue, Chengshan[1]; Zhuang, Huizhao[1]; Zhang, Xiaokai[1]; Ai, Yujie[1]; Sun, Lih[1]; Yang, Zhaozhu[1]; Li, Hong[1] | |
2008 | |
卷号 | 40期号:3页码:664-667 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000253032800041 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5783938 |
专题 | 山东师范大学 |
作者单位 | [1]Shandong Normal Univ, Inst Semicond, Funct Mat Lab, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Fuxue[1],Xue, Chengshan[1],Zhuang, Huizhao[1],et al. Growth and characterization of the InN film ammonification technique[J],2008,40(3):664-667. |
APA | Wang, Fuxue[1].,Xue, Chengshan[1].,Zhuang, Huizhao[1].,Zhang, Xiaokai[1].,Ai, Yujie[1].,...&Li, Hong[1].(2008).Growth and characterization of the InN film ammonification technique.,40(3),664-667. |
MLA | Wang, Fuxue[1],et al."Growth and characterization of the InN film ammonification technique".40.3(2008):664-667. |
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