Gate Sensed Method of Load Current Imbalance Measuring for Paralleling IGBT Devices | |
Zeng, Xiao; Li, Zehong; Yang, Fashun; Chen, Qian; Ren, Min; Zhang, Jinping; Gao, Wei; Li, Zhaoji; Zhang, Bo | |
2016 | |
会议日期 | JUN 12-16, 2016 |
会议地点 | Prague, CZECH REPUBLIC |
会议录 | 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5769575 |
专题 | 贵州大学 |
作者单位 | 1.[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Sichuan, Peoples R China 2.[2]Guizhou Univ, Guiyang, Guizhou, Peoples R China |
推荐引用方式 GB/T 7714 | Zeng, Xiao,Li, Zehong,Yang, Fashun,et al. Gate Sensed Method of Load Current Imbalance Measuring for Paralleling IGBT Devices[C]. 见:. Prague, CZECH REPUBLIC. JUN 12-16, 2016. |
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