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Negative differential resistance behavior in doped C82 molecular devices
Hui, Xu; Jia, Shu-Ting; Chen, Ling-Na
刊名Journal of Central South University
2012
卷号19期号:2页码:299-303
关键词electronic transport properties negative differential resistance first-principle molecular device
ISSN号2095-2899
DOI10.1007/s11771-012-1004-7
URL标识查看原文
WOS记录号WOS:000299928600001;EI:20122615184604
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5679291
专题南华大学
作者单位1.[Jia, Shu-Ting
2.Hui, Xu
3.Chen, Ling-Na] Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Hunan, Peoples R China.
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Hui, Xu,Jia, Shu-Ting,Chen, Ling-Na. Negative differential resistance behavior in doped C82 molecular devices[J]. Journal of Central South University,2012,19(2):299-303.
APA Hui, Xu,Jia, Shu-Ting,&Chen, Ling-Na.(2012).Negative differential resistance behavior in doped C82 molecular devices.Journal of Central South University,19(2),299-303.
MLA Hui, Xu,et al."Negative differential resistance behavior in doped C82 molecular devices".Journal of Central South University 19.2(2012):299-303.
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