Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV

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	Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV
	Xu ZL(徐自亮); Xu WJ; Li L
刊名	Applied Physics A-Materials Science & Processing
	1998
卷号	66 期号:5 页码:565-567
ISSN号	0947-8396
通讯作者	Xu, ZL (reprint author), Chinese Acad Sci, Inst Mech, Natl Micrograv Lab China, Beijing 100080, Peoples R China.
中文摘要	III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calculations agree well with the measured PL peak energy data from pentenary samples.
学科主题	力学
类目[WOS]	Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Materials Science ; Physics
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000073639100016
公开日期	2007-06-15 ; 2007-12-05 ; 2009-06-23
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/15874]
专题	力学研究所_力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Xu ZL,Xu WJ,Li L. Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV[J]. Applied Physics A-Materials Science & Processing,1998,66(5):565-567.
APA	徐自亮,Xu WJ,&Li L.(1998).Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV.Applied Physics A-Materials Science & Processing,66(5),565-567.
MLA	徐自亮,et al."Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV".Applied Physics A-Materials Science & Processing 66.5(1998):565-567.