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	Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon
	Zhao Y; Li DS; Xing SX; Sang WB; Yang D; Jiang MH
刊名	Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter
	2008
卷号	128期号:3页码:317-320
关键词	porous silicon blue emission rapid thermal processes BLUE LUMINESCENCE OXIDATION CARBON STABILIZATION DISSOLUTION EMISSION ORIGIN
DOI	10.1016/j.jlumin.2007.04.015
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5563010
专题	山东大学
作者单位	Department of Electronic Information Materials, Shanghai University, Shanghai, 200072, China, State Key Laboratory of Silicon Materials, Zhe
推荐引用方式 GB/T 7714	Zhao Y,Li DS,Xing SX,et al. Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon[J]. Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2008,128(3):317-320.
APA	Zhao Y,Li DS,Xing SX,Sang WB,Yang D,&Jiang MH.(2008).Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon.Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,128(3),317-320.
MLA	Zhao Y,et al."Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon".Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter 128.3(2008):317-320.

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