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	Recent progress in research of structural defects in 6H-SiC single crystals
	Xu, Xiangang; Gao, Yuqiang; Hu, Xiaobo; Huang, Wanxia; Yuan, Qingxi
刊名	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
	2009
页码	287-290
DOI	10.1109/EDSSC.2009.5394265
会议名称	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
URL标识	查看原文
会议日期	25 December 2009 through 27 December 2009
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5543259
专题	山东大学
作者单位	1.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China 2.[Huang, Wanxia 3.Yuan, Qi
推荐引用方式 GB/T 7714	Xu, Xiangang,Gao, Yuqiang,Hu, Xiaobo,et al. Recent progress in research of structural defects in 6H-SiC single crystals[J]. 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009,2009:287-290.
APA	Xu, Xiangang,Gao, Yuqiang,Hu, Xiaobo,Huang, Wanxia,&Yuan, Qingxi.(2009).Recent progress in research of structural defects in 6H-SiC single crystals.2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009,287-290.
MLA	Xu, Xiangang,et al."Recent progress in research of structural defects in 6H-SiC single crystals".2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 (2009):287-290.

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