| Structural and electrical properties of K0.5Bi0.5TiO3thin films for ferroelectric field effect transistor applications | |
| Jing, Xiangyang; Huang, Baibiao; Zhang, Xiaoyang; Qin, Xiaoyan; Wei, Jiyong; Wang, Xiaoning; Yao, Shushan; Xu, Zhenhua; Wang, Zeyan; Wang, Peng | |
| 刊名 | Journal of Physics D: Applied Physics
 |
| 2009 | |
| 卷号 | 42期号:4 |
| DOI | 10.1088/0022-3727/42/4/045421 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5522811 |
| 专题 | 山东大学 |
| 作者单位 | Sta |
| 推荐引用方式 GB/T 7714 | Jing, Xiangyang,Huang, Baibiao,Zhang, Xiaoyang,et al. Structural and electrical properties of K0.5Bi0.5TiO3thin films for ferroelectric field effect transistor applications[J]. Journal of Physics D: Applied Physics,2009,42(4). |
| APA | Jing, Xiangyang.,Huang, Baibiao.,Zhang, Xiaoyang.,Qin, Xiaoyan.,Wei, Jiyong.,...&Wang, Peng.(2009).Structural and electrical properties of K0.5Bi0.5TiO3thin films for ferroelectric field effect transistor applications.Journal of Physics D: Applied Physics,42(4). |
| MLA | Jing, Xiangyang,et al."Structural and electrical properties of K0.5Bi0.5TiO3thin films for ferroelectric field effect transistor applications".Journal of Physics D: Applied Physics 42.4(2009). |
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