CORC  > 山东大学
Growth and thermal annealing effect on infrared transmittance of ZnGeP_2 single crystal
Guodong Zhang; Xutang Tao; Shanpeng Wang; Guandong Liu; Qiong Shi; Minhua Jiang
刊名Journal of Crystal Growth
2011
卷号318期号:1页码:717-720
关键词A1. Point defects A2. Single crystal growth A2. Bridgman technique B1. Phosphides B2. Nonlinear optic materials
DOI10.1016/j.jcrysgro.2010.11.038
会议名称16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14)
URL标识查看原文
会议日期AUG 08-13, 2010
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5477338
专题山东大学
作者单位1.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
2.State Key Laboratory of Crystal Materials, Sh
推荐引用方式
GB/T 7714
Guodong Zhang,Xutang Tao,Shanpeng Wang,et al. Growth and thermal annealing effect on infrared transmittance of ZnGeP_2 single crystal[J]. Journal of Crystal Growth,2011,318(1):717-720.
APA Guodong Zhang,Xutang Tao,Shanpeng Wang,Guandong Liu,Qiong Shi,&Minhua Jiang.(2011).Growth and thermal annealing effect on infrared transmittance of ZnGeP_2 single crystal.Journal of Crystal Growth,318(1),717-720.
MLA Guodong Zhang,et al."Growth and thermal annealing effect on infrared transmittance of ZnGeP_2 single crystal".Journal of Crystal Growth 318.1(2011):717-720.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace