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Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes
Zheng, J.; Lyu, Y.; Xie, C.; Wang, R.; Tao, L.; Wu, H.; Zhou, H.; Jiang, S.; Wang, S.
刊名Advanced Materials
2018
卷号Vol.30 No.31
关键词charge separation and transfer doping oxygen defects plasma protection layers
ISSN号0935-9648
URL标识查看原文
公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5469163
专题湖南大学
作者单位1.a State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, China
2.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
3.Fuels and Energy Technology Institute and Department of Chemical Engineering, Curtin University, Perth, WA 6102, Australia
推荐引用方式
GB/T 7714
Zheng, J.,Lyu, Y.,Xie, C.,et al. Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes[J]. Advanced Materials,2018,Vol.30 No.31.
APA Zheng, J..,Lyu, Y..,Xie, C..,Wang, R..,Tao, L..,...&Wang, S..(2018).Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes.Advanced Materials,Vol.30 No.31.
MLA Zheng, J.,et al."Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes".Advanced Materials Vol.30 No.31(2018).
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