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	Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks
	Liang, Shuang[1]; He, Gang[2]; Wang, Die[3]; Qiao, Fen[4]
刊名	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
	2019
卷号	35期号:5页码:769-776
关键词	Al2O3 passivation layer Co-sputtering HYO films Annealing Electrical properties Conduction mechanism
ISSN号	1005-0302
DOI	http://dx.doi.org/10.1016/j.jmst.2018.11.003
URL标识	查看原文
收录类别	SCI(E) ; EI
WOS记录号	WOS:000460640200009
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5323281
专题	江苏大学
作者单位	1.[1]Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Anhui, Peoples R China. 2.[2]Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Anhui, Peoples R China. 3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Anhui, Peoples R China. 4.[3]Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Anhui, Peoples R China. 5.[4]Jiangsu Univ, Sch Energy & Power Engn, Zhenjiang 212013, Jiangsu, Peoples R China.
推荐引用方式 GB/T 7714	Liang, Shuang[1],He, Gang[2],Wang, Die[3],et al. Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2019,35(5):769-776.
APA	Liang, Shuang[1],He, Gang[2],Wang, Die[3],&Qiao, Fen[4].(2019).Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,35(5),769-776.
MLA	Liang, Shuang[1],et al."Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 35.5(2019):769-776.

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