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	Led with alternated strain layer
	WANG, WANG NANG; LEE, STEPHEN SEN-TIEN
	2002-07-09
著作权人	ARIMA OPTOELECTRONICS CORPORATION
专利号	US6417522
国家	美国
文献子类	授权发明
其他题名	Led with alternated strain layer
英文摘要	The present invention relates to light omitting diodes having an AlGaInP active layer disposed between two cladding layers of AlGaInP, with a strain layer grown on the second cladding layer and comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with preselected composition. In one embodiment, the composition of the alternated AlGaInP layers is an ohmic n-electrode on a rear surface of a GaAs substrate: a distributed AlGaAs Bragg reflecting layer in the form of a multi-layer lamination; a first, lower AlGaInP cladding layer grown on the reflecting layer; an AlGaInP active layer grown on the lower cladding layer; a second, upper AlGaInP cladding layer grown on the active layer; a strain layer grown on the second cladding layer, the strain layer comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with the composition: (AlxGa1-x)1-yInyP/(AlnGa1-n)1-hInhP, where 0.5<=x<=1; 0.4<=y<=0.6/0<=a<=0.4; 0<=b<=0.4.
公开日期	2002-07-09
申请日期	1999-12-02
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42348]
专题	半导体激光器专利数据库
作者单位	ARIMA OPTOELECTRONICS CORPORATION
推荐引用方式 GB/T 7714	WANG, WANG NANG,LEE, STEPHEN SEN-TIEN. Led with alternated strain layer. US6417522. 2002-07-09.

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