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	Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials
	KHARE, REENA; KISH, FRED A.
	2001-03-13
著作权人	LUMILEDS LLC
专利号	US6201264
国家	美国
文献子类	授权发明
其他题名	Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials
英文摘要	For AlGaAs LEDs the confining layers adjoining the active layer possess the highest Al composition. From failure analysis of non-passivated, WHTOL-aged, AlGaAs LEDs, it was discovered that corrosion occurs the fastest at the exposed surfaces of the high Al-content confining layers. By placing a high-quality native oxide at the exposed surfaces of the high Al-content confining layers which protect from the formation of the "poor' oxide, it is possible for LEDs to retain essentially their same light output after 2,000 hours of WHTOL testing. Further, it is possible to improve carrier confinement, carrier injection, wave guiding, and other properties by increasing the Al-content of different layers.
公开日期	2001-03-13
申请日期	1999-01-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42262]
专题	半导体激光器专利数据库
作者单位	LUMILEDS LLC
推荐引用方式 GB/T 7714	KHARE, REENA,KISH, FRED A.. Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials. US6201264. 2001-03-13.

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