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	Method for producing semiconductor device
	KANENO, NOBUAKI; KIZUKI, HIROTAKA; HAYAFUJI, NORIO; SHIBA, TETSUO; TADA, HITOSHI
	1994-05-31
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US5316967
国家	美国
文献子类	授权发明
其他题名	Method for producing semiconductor device
英文摘要	In a method for producing a semiconductor device, a first semiconductor layer is epitaxially grown on a semiconductor substrate, an insulating film pattern is formed on the first semiconductor layer, and portions of the first semiconductor layer are removed by wet etching using the insulating film pattern as a mask to leave a ridge having a reverse mesa shape and a width. Ends of the insulating film pattern are removed by etching to approximately the width of the ridge, a second semiconductor layer is epitaxially grown on opposite sides of the ridge, and a third semiconductor layer is epitaxially grown on the ridge and the second semiconductor layer. The second semiconductor layer is evenly grown without concave portions at opposite sides of the ridge. In addition, the third semiconductor layer is evenly grown on the ridge and the second semiconductor layer, and an electrode reliably connects the surface of the third semiconductor layer. A semiconductor device with good performance and high reliability is reproducibly manufactured.
公开日期	1994-05-31
申请日期	1992-11-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42244]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KANENO, NOBUAKI,KIZUKI, HIROTAKA,HAYAFUJI, NORIO,et al. Method for producing semiconductor device. US5316967. 1994-05-31.

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