QQ客服 官方微博 反馈留言

	Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
	MCLAURIN, MELVIN; SZTEIN, ALEXANDER; HSU, PO SHAN; RARING, JAMES W.
	2015-12-08
著作权人	SORAA LASER DIODE, INC.
专利号	US9209596
国家	美国
文献子类	授权发明
其他题名	Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
英文摘要	In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.
公开日期	2015-12-08
申请日期	2014-02-07
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42207]
专题	半导体激光器专利数据库
作者单位	SORAA LASER DIODE, INC.
推荐引用方式 GB/T 7714	MCLAURIN, MELVIN,SZTEIN, ALEXANDER,HSU, PO SHAN,et al. Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates. US9209596. 2015-12-08.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。