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	化合物半導体の成長方法及び半導体レーザの製造方法
	関 章憲; 細羽 弘之; 幡 俊雄; 近藤 雅文; 須山 尚宏; 松井 完益
	1997-10-09
著作权人	シャープ株式会社
专利号	JP2706369B2
国家	日本
文献子类	授权发明
其他题名	化合物半導体の成長方法及び半導体レーザの製造方法
英文摘要	PURPOSE:To remove remainder on an etched face and irregularities caused thereby and obtain a flat thermal etching surface by applying a Ga molecular beam and an As molecular beam simultaneously and at the same time performing heat treatment at a temperature high enough to evaporate a GaAs layer. CONSTITUTION:A compound semiconductor substrate 3 comprising a GaAs substrate 1 and an AlxGa1-xAs layer 2 on which a several-thousand angstroms thick GaAs layer 4 is laminated is fitted in an MBE device and heated at a desired temperature about as high as 630 deg.C while an As molecular beam is applied to the substrate to sublime and remove an oxide layer on the surface of the GaAs layer 4. A specified quantity of a Ga molecular beam is applied simultaneously with the As molecular beam for heating and a temperature as high as 720-760 deg.C is kept for about 30 minutes while a first GaAs layer is formed. The quantity of the applied Ga molecular beam is determined so that the growth speed of GaAs may be lower than its sublimation speed. Thereby a very flat, high-quality AlGaAs epitaxial layer 6 laminated directly on the compound semiconductor substrate 3 without interposing a buffer layer is obtained.
公开日期	1998-01-28
申请日期	1990-11-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42167]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	関 章憲,細羽 弘之,幡 俊雄,等. 化合物半導体の成長方法及び半導体レーザの製造方法. JP2706369B2. 1997-10-09.

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