| 面発光半導体レーザの製造方法 | |
| 高村 孝士 | |
| 1999-10-22 | |
| 著作权人 | セイコーエプソン株式会社 |
| 专利号 | JP2993167B2 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面発光半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To prevent the occurrence of a surface level so as to easily obtain a surface-emission semiconductor laser good enough in characteristics by a method wherein an active layer is etched with zinc compound-containing etching gas, and an etching mask is formed of insulator or metal. CONSTITUTION:An N-type GaAs buffer layer 103, a distributed reflection type multilayered film mirror 104, an N-type clad layer 105, a P-type GaAs active layer 106, a P-type clad layer 107, and a P-type contact layer 108 are epitaxially grown in succession on an N-type GaAs substrate 102. An SiO2 layer is formed on the surface through a hot CVD method, which is formed into a cylindrical SiO2 112 through photo-patterning. A cylindrical light emitting part is formed through etching. At this point, the etching gas contains dimethylzinc or diethylzinc or organic zinc compound, and the etching mask is formed of photoresist, silicon oxide, silicon nitride, molybdenum, or nickel. |
| 公开日期 | 1999-12-20 |
| 申请日期 | 1991-04-09 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42121]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | セイコーエプソン株式会社 |
| 推荐引用方式 GB/T 7714 | 高村 孝士. 面発光半導体レーザの製造方法. JP2993167B2. 1999-10-22. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论