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	AlGaInN LED and laser diode structures for pure blue or green emission
	BOUR, DAVID PAUL; KNEISSL, MICHAEL A.
	2001-05-15
著作权人	XEROX CORPORATION
专利号	US6233265
国家	美国
文献子类	授权发明
其他题名	AlGaInN LED and laser diode structures for pure blue or green emission
英文摘要	Group III-V nitride semiconductors are used as optoelectronic light emitters. The semiconductor alloy InGaN is used as the active region in nitride laser diodes and LEDs, as its bandgap energy can be tuned by adjusting the alloy composition, to span the entire visible spectrum. InGaN layers of high-indium content, as required for blue or green emission are difficult to grow, however, because the poor lattice mismatch between GaN and InGaN causes alloy segregation. In this situation, the inhomogeneous alloy composition results in spectrally impure emission, and diminished optical gain. To suppress segregation, the high-indium-content InGaN active region may be deposited over a thick InGaN layer, substituted for the more typical GaN. First depositing a thick InGaN layer establishes a larger lattice parameter than that of GaN. Consequently, a high indium content heterostructure active region grown over the thick InGaN layer experiences significantly less lattice mismatch compared to GaN. Therefore, it is less likely to suffer structural degradation due to alloy segregation. Thus, the thick GaN structure enables the growth of a high indium content active region with improved structural and optoelectronic properties, leading to LEDs with spectrally pure emission, and lower threshold laser diodes.
公开日期	2001-05-15
申请日期	1998-07-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42113]
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	BOUR, DAVID PAUL,KNEISSL, MICHAEL A.. AlGaInN LED and laser diode structures for pure blue or green emission. US6233265. 2001-05-15.

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