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	System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom
	TAKEUCHI, TETSUYA; TAN, MICHAEL; CHANG, YING-IAN
	2005-08-23
著作权人	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
专利号	US6934312
国家	美国
文献子类	授权发明
其他题名	System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom
英文摘要	A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one nitrogen precursor has a direct bond between at least one group III atom and at least one nitrogen atom. In addition, the nitrogen precursor is used to fabricate a layer constituting part of an active region of the light emitting device containing indium, gallium, arsenic, and nitrogen, wherein the active region produces light having a wavelength in the range of approximately 2 to 6 micrometers. A method for fabricating a semiconductor structure is also disclosed. The method comprises providing a substrate and growing over the substrate a layer comprising indium, gallium, arsenic, and nitrogen using at least one nitrogen precursor having a direct bond between at least one group III atom and at least one nitrogen atom.
公开日期	2005-08-23
申请日期	2002-09-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42014]
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
推荐引用方式 GB/T 7714	TAKEUCHI, TETSUYA,TAN, MICHAEL,CHANG, YING-IAN. System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom. US6934312. 2005-08-23.

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