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	Method of fabricating a high power semiconductor laser with self-aligned ion implantation
	LEE, JUNG KEE; PARK, KYUNG HYUN; CHO, HO SUNG; NAM, EUN SOO; JANG, DONG HOON
	2000-12-26
著作权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
专利号	US6165811
国家	美国
文献子类	授权发明
其他题名	Method of fabricating a high power semiconductor laser with self-aligned ion implantation
英文摘要	A method of fabricating a semiconductor laser comprises the steps of sequentially depositing a lower cladding layer, an active layer, a first upper cladding layer, an etching stop layer, a second upper cladding layer and an ohmic contact layer over a compound semiconductor substrate, forming an etching mask over the ohmic contact layer so as to expose channel regions and to shield the ridge regions between the channel regions, performing wet etching to etch the ohmic contact layer and the second upper cladding layer so as to expose the etching stop layer so as to form the channels and the ridges having narrower widths than the parts of the etching mask shielding the ridge regions, and implanting dopant ions into the parts of the first upper cladding layer and the active layer below the channels to form ion-implanted regions by using the etching mask as the ion implantation mask.
公开日期	2000-12-26
申请日期	1998-11-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41953]
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	LEE, JUNG KEE,PARK, KYUNG HYUN,CHO, HO SUNG,et al. Method of fabricating a high power semiconductor laser with self-aligned ion implantation. US6165811. 2000-12-26.

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