| Solidstate light-emitting device | |
| INOUE, MORIO; ITOH, KUNIO; ASAHI, KUNIHIKO | |
| 1979-04-10 | |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 专利号 | US4149175 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Solidstate light-emitting device |
| 英文摘要 | A mesa region of a stripe geometry is formed by mesa-etching a surface of a GaAs crystal substrate, forming a crystal layer of higher resistivity than the abovementioned crystal substrate so as to fill the abovementioned mesa-etched recesses in a manner that the stripe shaped mesa region is buried in the higher resistivity regions making top faces of the mesa region and the higher resistivity regions flush with each other, then forming, on the abovementioned flush surface, several epitaxial growth regions of semiconductor crystal including a light emitting region, for instance, an active region for lasing, subsequently forming contact isolation region having an opening of the stripe geometry corresponding to and above said mesa region. The current flow in the active region is confined in a narrow stripe region. |
| 公开日期 | 1979-04-10 |
| 申请日期 | 1978-01-30 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41744]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | INOUE, MORIO,ITOH, KUNIO,ASAHI, KUNIHIKO. Solidstate light-emitting device. US4149175. 1979-04-10. |
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