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	Method for accurate growth of vertical-cavity surface-emitting lasers
	CHALMERS, SCOTT A.; KILLEEN, KEVIN P.; LEAR, KEVIN L.
	1995-03-14
著作权人	SANDIA CORPORATION
专利号	US5397739
国家	美国
文献子类	授权发明
其他题名	Method for accurate growth of vertical-cavity surface-emitting lasers
英文摘要	We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.
公开日期	1995-03-14
申请日期	1993-07-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41439]
专题	半导体激光器专利数据库
作者单位	SANDIA CORPORATION
推荐引用方式 GB/T 7714	CHALMERS, SCOTT A.,KILLEEN, KEVIN P.,LEAR, KEVIN L.. Method for accurate growth of vertical-cavity surface-emitting lasers. US5397739. 1995-03-14.

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