Structure of VCSEL and method for manufacturing the same | |
LIN, BING-CHENG; CHEN, CHIH CHENG; TSENG, HUNG-WEI | |
2018-03-27 | |
著作权人 | TRUELIGHT CORPORATION |
专利号 | US9929536 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Structure of VCSEL and method for manufacturing the same |
英文摘要 | A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light. |
公开日期 | 2018-03-27 |
申请日期 | 2017-06-15 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/40589] |
专题 | 半导体激光器专利数据库 |
作者单位 | TRUELIGHT CORPORATION |
推荐引用方式 GB/T 7714 | LIN, BING-CHENG,CHEN, CHIH CHENG,TSENG, HUNG-WEI. Structure of VCSEL and method for manufacturing the same. US9929536. 2018-03-27. |
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