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	Light-emitting diode device and method of manufacturing the same
	LIN, MING-DER
	2001-07-03
著作权人	EPISTAR CORPORATION
专利号	US6255129
国家	美国
文献子类	授权发明
其他题名	Light-emitting diode device and method of manufacturing the same
英文摘要	A light-emitting diode device, such as a blue, green, blue-green light-emitting diode, with a one-wire-bonding characteristic and the method of manufacturing the same have been disclosed. The light-emitting diode device has a GaN-based semiconductor laminated structure formed on an insulating substrate. The GaN-based semiconductor laminated structure includes an n-type layer on its bottom side, a p-type layer on its top side, and an active layer, for generating light, sandwiched between the n-type and p-type layers. An annular isolation portion such as a trench or a high resistivity portion formed by ion implantation is formed in the GaN-based semiconductor laminated structure to separate the p-type layer into a central p-type layer and a peripheral p-type layer and to separate the active layer into a central active layer and a peripheral active layer. A p-type electrode is formed on the central p-type layer without electrically connecting to the peripheral p-type layer. A conductive layer is coated to cover the sidewalls and the bottom surface of the insulating substrate and to ohmically contact with the n-type layer. Preferably, an adhesion layer is sandwiched between the sidewalls and the bottom surface of the insulating substrate and the conductive layer to enhance the adhesive property. According to the present invention, the conductive layer may be formed as a mirror-like reflector or a light-transmissive layer.
公开日期	2001-07-03
申请日期	2000-09-07
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/40160]
专题	半导体激光器专利数据库
作者单位	EPISTAR CORPORATION
推荐引用方式 GB/T 7714	LIN, MING-DER. Light-emitting diode device and method of manufacturing the same. US6255129. 2001-07-03.

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