| Three-mirror active-passive semiconductor laser | |
| GARMIRE, ELSA M.; EVANS, GARY A.; NIESEN, JOSEPH W. | |
| 1984-12-11 | |
| 著作权人 | UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
| 专利号 | US4488307 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Three-mirror active-passive semiconductor laser |
| 英文摘要 | Disclosed is a GaA1As laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely-spaced dual mode operation, and narrow-band multimode operation. |
| 公开日期 | 1984-12-11 |
| 申请日期 | 1982-06-07 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39641]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
| 推荐引用方式 GB/T 7714 | GARMIRE, ELSA M.,EVANS, GARY A.,NIESEN, JOSEPH W.. Three-mirror active-passive semiconductor laser. US4488307. 1984-12-11. |
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