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	Semiconductor laser having a doped active layer
	YOUNG, DAVID BRUCE; HA, YUK LUNG; VERMA, ASHISH; ENG, LARS
	2009-08-11
著作权人	FINISAR CORPORATION
专利号	US7573925
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser having a doped active layer
英文摘要	Semiconductor lasers having a doped active region. In one example embodiment, a laser includes a substrate and a doped active region positioned above the substrate. The doped active region includes a plurality of quantum wells separated by a plurality of barrier layers. The quantum wells and the barrier layers are doped with a doping material with a concentration between about 1*10^16/cm3 to about 1*10^17/cm3.
公开日期	2009-08-11
申请日期	2007-05-15
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39573]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	YOUNG, DAVID BRUCE,HA, YUK LUNG,VERMA, ASHISH,et al. Semiconductor laser having a doped active layer. US7573925. 2009-08-11.

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