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	Light emitting system and method of fabricating and using the same
	BAHIR, GAD; FEKETE, DAN; ALBO, ASAF
	2013-02-05
著作权人	TECHNION RESEARCH & DEVELOPMENT FOUNDATION LTD.
专利号	US8367450
国家	美国
文献子类	授权发明
其他题名	Light emitting system and method of fabricating and using the same
英文摘要	A light emitting system is disclosed. The system comprises an active region having a stack of bilayer quantum well structures separated from each other by barrier layers. Each bilayer quantum well structure is formed of a first layer made of a first semiconductor alloy for electron confinement and a second layer made of a second semiconductor alloy for hole confinement, wherein a thickness and composition of each layer is such that a characteristic hole confinement energy of the bilayer quantum well structure is at least 200 meV.
公开日期	2013-02-05
申请日期	2011-02-21
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39484]
专题	半导体激光器专利数据库
作者单位	TECHNION RESEARCH & DEVELOPMENT FOUNDATION LTD.
推荐引用方式 GB/T 7714	BAHIR, GAD,FEKETE, DAN,ALBO, ASAF. Light emitting system and method of fabricating and using the same. US8367450. 2013-02-05.

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