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	Very short wavelength semiconductor laser
	TANAKA, TOSHIAKI
	1994-07-19
著作权人	HITACHI, LTD.
专利号	US5331656
国家	美国
文献子类	授权发明
其他题名	Very short wavelength semiconductor laser
英文摘要	A laser device, for example, a diode, is provided which has an oscillation wavelength shorter than 600 nm by using III-V semiconductor materials. This is achieved by using nitrogen doping with GaInP material on a GaP substrate to increase the critical layer thickness of the strained layer. As one example, the following layers can be epitaxially-grown in order on an n-type GaP substrate 1 by a molecular beam epitaxy (MBE) method: a Si-doped n-type AlyGal-yP optical waveguide layer; a multiple quantum well layer made by repeatedly forming four nitrogen-doped Gax1In1-x1P quantum barrier layers and three nitrogen-doped Gax2In1-x2P quantum well layers; a Zn-doped p-type AlyGa1-yP optical waveguide layer; a Zn-doped p-type Gax3In1-x3P thin layer; and a Zn-doped p-type AlyGa1-yP optical waveguide layer. Next, the thin Gax3In1-x3P layer is processed to form a ridge stripe. Then, an n-type Gap current constriction layer is selectively grown and a p-electrode and an n-electrode are formed. Using such a structure, it is possible to obtain a yellow laser element having a threshold current of 100 to 150 mA and an oscillation wavelength of 565 to 580 nm controlled in the transverse mode under continuous-wave (CW) room-temperature operation. Other embodiments use either a single quantum well layer or superlattice layers to obtain either yellow-green light or orange light of very short wavelengths.
公开日期	1994-07-19
申请日期	1993-07-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39416]
专题	半导体激光器专利数据库
作者单位	HITACHI, LTD.
推荐引用方式 GB/T 7714	TANAKA, TOSHIAKI. Very short wavelength semiconductor laser. US5331656. 1994-07-19.

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