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	Method for manufacturing semiconductor device and the semiconductor device
	MORI, HIROKI; TANAHASHI, TOSHIYUKI
	2016-06-21
著作权人	SUMITOMO ELECTRIC INDUSTRIES, LTD.
专利号	US9373939
国家	美国
文献子类	授权发明
其他题名	Method for manufacturing semiconductor device and the semiconductor device
英文摘要	A method for manufacturing a semiconductor device comprising the steps of: growing a stacked semiconductor layer on a substrate, the stacked semiconductor layer including an active layer and a cladding layer; forming a mesa structure by etching the stacked semiconductor layer, the mesa structure extending in a [011] direction; and forming a buried layer of Fe-doped InP on the side surface of the mesa structure in a reactor of an organo-metallic vapor phase epitaxy apparatus while supplying a hydrogen chloride gas into the reactor. In the step of forming the buried layer, the hydrogen chloride gas is supplied from the beginning of forming the buried layer. The buried layer has a first region and a second region. The first region has a front surface of a (311)B plane. The second region is formed on the front surface. The Fe concentration of the first region is higher than that of the second region.
公开日期	2016-06-21
申请日期	2015-06-05
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39272]
专题	半导体激光器专利数据库
作者单位	SUMITOMO ELECTRIC INDUSTRIES, LTD.
推荐引用方式 GB/T 7714	MORI, HIROKI,TANAHASHI, TOSHIYUKI. Method for manufacturing semiconductor device and the semiconductor device. US9373939. 2016-06-21.

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