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	Optical device structure using GaN substrates for laser applications
	RARING, JAMES W.; FEEZELL, DANIEL F.; PFISTER, NICHOLAS J.; SHARMA, RAJAT; SCHMIDT, MATHEW C.; ELSASS, CHRISTIANE POBLENZ; CHANG, YU-CHIA
	2017-08-01
著作权人	SORAA LASER DIODE, INC.
专利号	US9722398
国家	美国
文献子类	授权发明
其他题名	Optical device structure using GaN substrates for laser applications
英文摘要	An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
公开日期	2017-08-01
申请日期	2015-06-11
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38671]
专题	半导体激光器专利数据库
作者单位	SORAA LASER DIODE, INC.
推荐引用方式 GB/T 7714	RARING, JAMES W.,FEEZELL, DANIEL F.,PFISTER, NICHOLAS J.,et al. Optical device structure using GaN substrates for laser applications. US9722398. 2017-08-01.

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