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	LED on silicon substrate using zinc-sulfide as buffer layer
	CHEN, ZHEN
	2015-10-13
著作权人	KABUSHIKI KAISHA TOSHIBA
专利号	US9159869
国家	美国
文献子类	授权发明
其他题名	LED on silicon substrate using zinc-sulfide as buffer layer
英文摘要	A vertical GaN-based blue LED has an n-type GaN layer that was grown over a ZnS layer that in turn was grown directly on a silicon substrate. In one example, the ZnS layer is a transitional buffer layer that is 50 nm thick, and the n-type GaN layer is at least 2000 nm thick. Growing the n-type GaN layer on the ZnS buffer layer reduces lattice defect density in the n-type layer. The ZnS buffer layer provides a good lattice constant match with the silicon substrate and provides a compound polar template for subsequent GaN growth. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate and the ZnS buffer layer are then removed. Electrodes are added and the structure is singulated to form finished LED devices.
公开日期	2015-10-13
申请日期	2014-01-17
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38638]
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	CHEN, ZHEN. LED on silicon substrate using zinc-sulfide as buffer layer. US9159869. 2015-10-13.

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