Epitaxial growth of in-plane nanowires and nanowire devices | |
LEE, SEUNG CHANG; BRUECK, STEVEN R. J. | |
2014-07-22 | |
著作权人 | STC.UNM |
专利号 | US8785226 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Epitaxial growth of in-plane nanowires and nanowire devices |
英文摘要 | Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance. |
公开日期 | 2014-07-22 |
申请日期 | 2013-09-20 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/38636] |
专题 | 半导体激光器专利数据库 |
作者单位 | STC.UNM |
推荐引用方式 GB/T 7714 | LEE, SEUNG CHANG,BRUECK, STEVEN R. J.. Epitaxial growth of in-plane nanowires and nanowire devices. US8785226. 2014-07-22. |
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