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	Photonic quantum ring laser and fabrication method thereof
	KWON, O DAE; SHIN, MI-HYANG; LEE, SEUNG EUN; JANG, YOUNG-HEUB; KIM, YOUNG CHUN; YOON, JUNHO
	2013-08-20
著作权人	POSTECH ACADEMY-INDUSTRY FOUNDATION
专利号	US8513036
国家	美国
文献子类	授权发明
其他题名	Photonic quantum ring laser and fabrication method thereof
英文摘要	A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.
公开日期	2013-08-20
申请日期	2012-06-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38606]
专题	半导体激光器专利数据库
作者单位	POSTECH ACADEMY-INDUSTRY FOUNDATION
推荐引用方式 GB/T 7714	KWON, O DAE,SHIN, MI-HYANG,LEE, SEUNG EUN,et al. Photonic quantum ring laser and fabrication method thereof. US8513036. 2013-08-20.

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