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	Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
	AKITA, KATSUSHI; ISHIZUKA, TAKASHI; FUJII, KEI; NAGAI, YOUICHI; NAKAHATA, HIDEAKI
	2012-11-13
著作权人	SUMITOMO ELECTRIC INDUSTRIES, LTD.
专利号	US8309380
国家	美国
文献子类	授权发明
其他题名	Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
英文摘要	Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 2 The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.
公开日期	2012-11-13
申请日期	2012-04-13
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38598]
专题	半导体激光器专利数据库
作者单位	SUMITOMO ELECTRIC INDUSTRIES, LTD.
推荐引用方式 GB/T 7714	AKITA, KATSUSHI,ISHIZUKA, TAKASHI,FUJII, KEI,et al. Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer. US8309380. 2012-11-13.

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