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	Group III nitride semiconductor multilayer structure and production method thereof
	HANAWA, KENZO; SASAKI, YASUMASA
	2012-07-03
著作权人	TOYODA GOSEI CO., LTD.
专利号	US8211727
国家	美国
文献子类	授权发明
其他题名	Group III nitride semiconductor multilayer structure and production method thereof
英文摘要	According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.
公开日期	2012-07-03
申请日期	2009-07-30
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38503]
专题	半导体激光器专利数据库
作者单位	TOYODA GOSEI CO., LTD.
推荐引用方式 GB/T 7714	HANAWA, KENZO,SASAKI, YASUMASA. Group III nitride semiconductor multilayer structure and production method thereof. US8211727. 2012-07-03.

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