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	Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device
	HUANG, SHIH CHENG; TU, PO MIN; YEH, YING CHAO; LIN, WEN YU; WU, PENG YI; CHAN, SHIH HSIUNG
	2012-06-19
著作权人	ADVANCED OPTOELECTRONIC TECHNOLOGY INC.
专利号	US8202752
国家	美国
文献子类	授权发明
其他题名	Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device
英文摘要	A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.
公开日期	2012-06-19
申请日期	2009-06-22
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38501]
专题	半导体激光器专利数据库
作者单位	ADVANCED OPTOELECTRONIC TECHNOLOGY INC.
推荐引用方式 GB/T 7714	HUANG, SHIH CHENG,TU, PO MIN,YEH, YING CHAO,et al. Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device. US8202752. 2012-06-19.

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