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	Monolithically-pumped erbium-doped waveguide amplifiers and lasers
	HALL, DOUGLAS; HUANG, MINGJUN
	2010-02-02
著作权人	UNIVERSITY OF NOTRE DAME DU LAC, THE
专利号	US7655489
国家	美国
文献子类	授权发明
其他题名	Monolithically-pumped erbium-doped waveguide amplifiers and lasers
英文摘要	Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.
公开日期	2010-02-02
申请日期	2008-05-19
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38459]
专题	半导体激光器专利数据库
作者单位	UNIVERSITY OF NOTRE DAME DU LAC, THE
推荐引用方式 GB/T 7714	HALL, DOUGLAS,HUANG, MINGJUN. Monolithically-pumped erbium-doped waveguide amplifiers and lasers. US7655489. 2010-02-02.

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