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	Surface emitting semiconductor laser and process for producing the same including forming an insulating layer on the lower reflector
	OTOMA, HIROMI; SAKURAI, JUN
	2006-08-29
著作权人	FUJI XEROX CO., LTD.
专利号	US7098059
国家	美国
文献子类	授权发明
其他题名	Surface emitting semiconductor laser and process for producing the same including forming an insulating layer on the lower reflector
英文摘要	A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active region, a current confinement layer interposed between the first and second semiconductor multilayer reflectors and partially including an oxide region, and an insulating layer formed on a coated surface provided by a semiconductor layer which is part of the first semiconductor multilayer reflector and is revealed after removal of a surface oxidation layer.
公开日期	2006-08-29
申请日期	2005-04-20
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38253]
专题	半导体激光器专利数据库
作者单位	FUJI XEROX CO., LTD.
推荐引用方式 GB/T 7714	OTOMA, HIROMI,SAKURAI, JUN. Surface emitting semiconductor laser and process for producing the same including forming an insulating layer on the lower reflector. US7098059. 2006-08-29.

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