Group-III nitride devices and systems on IBAD-textured substrates | |
MATIAS, VLADIMIR | |
2019-03-26 | |
著作权人 | IBEAM MATERIALS, INC. |
专利号 | US10243105 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Group-III nitride devices and systems on IBAD-textured substrates |
英文摘要 | A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology. |
公开日期 | 2019-03-26 |
申请日期 | 2017-08-11 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/38020] |
专题 | 半导体激光器专利数据库 |
作者单位 | IBEAM MATERIALS, INC. |
推荐引用方式 GB/T 7714 | MATIAS, VLADIMIR. Group-III nitride devices and systems on IBAD-textured substrates. US10243105. 2019-03-26. |
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