| III-N device structures and methods | |
| PARIKH, PRIMIT; DORA, YUVARAJ; WU, YIFENG; MISHRA, UMESH; FICHTENBAUM, NICHOLAS; LAL, RAKESH K. | |
| 2015-12-29 | |
| 著作权人 | TRANSPHORM INC. |
| 专利号 | US9224671 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | III-N device structures and methods |
| 英文摘要 | A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive. |
| 公开日期 | 2015-12-29 |
| 申请日期 | 2014-10-23 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37783]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TRANSPHORM INC. |
| 推荐引用方式 GB/T 7714 | PARIKH, PRIMIT,DORA, YUVARAJ,WU, YIFENG,et al. III-N device structures and methods. US9224671. 2015-12-29. |
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